IRF7910PBF parameter specification DataSheet and ECAD Model -ICQQG

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The pictures are for reference only

Brand:

Infineon

Model:

IRF7910PBF

Description:

MOSFET 2N-CH 12V 10A 8-SOIC

Stock:

3870

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Offer

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Phone：+86 19166251823(Wechat)

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Email：online1@ssf-asia.com

Parameters

Current at 25 ° C - continuous drain (Id)

10A

Drain source voltage (Vdss)

12V

FET Type

2 N-channels(two)

FET function

Logic level gate

Gate charge (Qg) at different Vgs (maximum)

26nC @ 4.5V

Input capacitance at different Vds (Ciss) (maximum)

1730pF @ 6V

On resistance (maximum) for different Ids and Vgs

15 mΩ @ 8A,4.5V

Power - maximum

Vgs (th) (maximum) for different Ids

2V @ 250µA

packing

pipe

series

HEXFET®

working temperature

-55°C ~ 150°C(TJ)

Encapsulation/Housing

8-SOIC(0.154,3.90mm wide)

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

DataSheet

下载IRF7910PBF.pdf

IRF7910PBF（FET, MOSFET）ByInfineonDesign and production, ICQQG Electronic component purchase website provides sufficient inventory3870,Price reference "real-time change" China/Hongkong。 IRF7910PBF package/specs, Download IRF7910PBF、Datasheet。